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Demonstration of the DC-Kerr effect in silicon-rich nitride

https://doi.org/10.1364/OL.432359

Friedman, Alex; Nejadriahi, Hani; Sharma, Rajat; Fainman, Yeshaiahu (August 2021, Optics Letters)

We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, ${χ<#comment/>}^{(3)}$ , as high as $(6 \pm<#comment/> 0.58) \times<#comment/> 10^{-<#comment/> 19} m^{2} / V^{2}$ . We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate a ${χ<#comment/>}^{(3)}$ larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows.
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Thermo-optic properties of silicon-rich silicon nitride for on-chip applications

https://doi.org/10.1364/OE.396969

Nejadriahi, Hani; Friedman, Alex; Sharma, Rajat; Pappert, Steve; Fainman, Yeshaiahu; Yu, Paul (August 2020, Optics Express)

We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65±0.08) ×10⁻⁴K^-1. Furthermore, we realize an SRN multi-mode interferometer (MMI) based thermo-optic switch with over 20 dB extinction ratio and total power consumption for two-port switching of 50 mW.
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Electronic Metamaterials with Tunable Second-order Optical Nonlinearities

https://doi.org/10.1038/s41598-017-10304-2

Lin, Hung-Hsi; Vallini, Felipe; Yang, Mu-Han; Sharma, Rajat; Puckett, Matthew W.; Montoya, Sergio; Wurm, Christian D.; Fullerton, Eric E.; Fainman, Yeshaiahu (December 2017, Scientific Reports)

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On the observation of dispersion in tunable second-order nonlinearities of silicon-rich nitride thin films

https://doi.org/10.1063/1.5053704

Lin, Hung-Hsi; Sharma, Rajat; Friedman, Alex; Cromey, Benjamin_M; Vallini, Felipe; Puckett, Matthew_W; Kieu, Khanh; Fainman, Yeshaiahu (March 2019, APL Photonics)
Synthesis of second-order nonlinearities in dielectric-semiconductor-dielectric metamaterials

https://doi.org/10.1063/1.4978640

Lin, Hung-Hsi; Yang, Mu-Han; Sharma, Rajat; Puckett, Matthew W.; Montoya, Sergio; Wurm, Christian D.; Vallini, Felipe; Fullerton, Eric E.; Fainman, Yeshaiahu (March 2017, Applied Physics Letters)

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